Method of growing a polycrystalline silicon layer,

专利名称：Method of growing a polycrystalline silicon

layer, method of growing a single crystalsilicon layer and catalytic CVD apparatus

发明人：Hisayoshi Yamoto,Hideo Yamanaka申请号：US09941530申请日：20010829公开号：US06709512B2公开日：20040323

专利附图：

摘要：When a polycrystalline or single crystal silicon layer is grown by catalytic CVD, acatalyst having a nitride covering at least its surface is used. In case that tungsten is used

as the catalyst, tungsten nitride is formed as the nitride. The nitride is made by heatingthe surface of the catalyst to a high temperature around 1600 to 2100° C. in an

atmosphere containing nitrogen prior to the growth. When the catalyst is heated to thetemperature for its use or its nitrification, it is held in a hydrogen atmosphere.

申请人：SONY CORPORATION

代理机构：Holland & Knight LLP

代理人：Robert J. Depke

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